SNU CBE

베타 산화갈륨(β-Ga2O3) beta gallium oxide

키워드 · 정보·전자소자

58학부 논문
1교수
490억 국가 R&D(2015–24)
신규증가율
1.30%서울대 비중

4.8 eV급 초광대역 밴드갭을 가진 산화물 반도체로 고전압 전력소자와 자외선 검출기에 쓰인다.

연도별 학부 논문

14151617181920212223242526

국가 R&D 과제 동향 (NTIS, 억 원)

15161718192021222324

2015–2024 과제 레코드 180건 · 10년 490억 · 2015–19 대비 2020–24 신규 · 대학 수행 22.3% · 서울대(본교) 1.30%. 매칭: 영문 키워드 'beta gallium oxide', 국문 '산화갈륨', 'Ga2O3'. 기관운영비·인력양성·출연연 주요사업비 등 과제 아닌 레코드는 뺐다.

매칭 과제의 NTIS 표준분류(1순위, 연구비 비중): 전기/전자 > 반도체 소자·회로 58% · 재료 > 세라믹재료 24% · 전기/전자 > 계측기기 5% · 기계 > 정밀생산기계 4%

최근 주요 과제 (2022–2024, 연차 정부연구비 순)

연도과제수행기관부처억
2023저결함(<1x104cm-2)특성의 고품위 Ga2O3 에피소재 및 1KV 이상의 항복전압을 가지는 전력소자 기술 개발(주)유제이엘산업통상자원부14.7
20222.5 kV급 고효율 초소형 산화갈륨 전력반도체 소자 기술 개발한국전자통신연구원과학기술정보통신부13.2
2024자연광 환경에서 고신뢰성을 갖는 아크 감지용 초고감도 DUV 센서 개발파워큐브세미(주)산업통상자원부12.2
20231.2kV급 산화갈륨 전력반도체 소자 기술개발파워큐브세미(주)산업통상자원부10.8
2023극한환경용 산화갈륨 자외선 센서 기술 개발한국항공대학산업통상자원부8.8
20224인치급 고품질 산화갈륨 단결정 성장 기술 개발한국세라믹기술원과학기술정보통신부8.5
20226인치급 산화갈륨 단결정 성장용 EFG 장비 및 핫존 설계 최적화 기술개발(주)악셀과학기술정보통신부8.2
20231.2kV급 저손실 산화갈륨 트랜지스터 개발파워큐브세미(주)산업통상자원부7.5

교수

교수연구분야논문2022년 이후
김지현공정시스템5814

함께 나오는 키워드

솔라블라인드 광검출기 양성자 조사 캐리어 제거율 기계적 박리 쇼트키 다이오드 항복 전압 p-n 이종접합 오믹 접촉 반데르발스 이종구조 깊은 준위 트랩

연결되는 NTIS 분류

나노 화학공정기술 1

논문 (최신순)

연도논문학부 저자피인용
2026Optimized HZO/Al2O3 gate stack enables thermally stable β-Ga2O3 ferroelectric field-effect transistors with an enhanced memory window
Device
김지현0
2026Forward Metal-Assisted Chemical Etching for Self-Aligned Gate-Recess Enhancement-Mode β-Ga2O3 Metal−Semiconductor Field-Effect Transistors
ACS Materials Letters
김지현0
2025Self-Powered Ultraviolet-C Imaging Using Epitaxial Gallium Oxide Membranes with Anisotropic Domain Conduction
ACS Nano
김지현12
2025WSe2/β-Ga2O3 p–n Heterojunction-Based Normally Off Phototransistors for Self-Powered UV-C Detection
ACS Photonics
김지현10
2025Defining the relative proton irradiation hardness of β-Ga2O3
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
김지현3
2025Achieving Face-Selective Ohmic Contact to β-Ga 2 O 3 via Anisotropic Trench Structure
ACS Applied Electronic Materials
김지현2
2024A high-breakdown-voltage β-Ga 2 O 3 nanoFET with a beveled field-plate structure
Journal of Materials Chemistry C
김지현10
2024Enhancement of heat dissipation in β-Ga 2 O 3 Schottky diodes through Cu-filled thermal vias: experimental and simulation investigations
Journal of Materials Chemistry C
김지현2
20232D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors
ACS Applied Materials & Interfaces
김지현28
202315 MeV proton damage in NiO/β-Ga2O3vertical rectifiers
Journal of Physics Materials
김지현18
2023Plasma Nitridation Effect on β-Ga2O3 Semiconductors
Nanomaterials
김지현12
2023Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers
ECS Journal of Solid State Science and Technology
김지현7
2022Exfoliated and bulk β-gallium oxide electronic and photonic devices
Science Talks
김지현12
2022β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV laser-assisted p-doping of two-dimensional WSe 2
Journal of Materials Chemistry C
김지현11
2021Magneto-optical properties of Cr3+ in β-Ga2O3
Applied Physics Letters
김지현31
20211 GeV proton damage in β-Ga2O3
Journal of Applied Physics
김지현18
2021Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 using a liquid gallium squeezing technique
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
김지현14
2021Effects of Downstream Plasma Exposure on β -Ga 2 O 3 Rectifiers
ECS Journal of Solid State Science and Technology
김지현8
2021(100) Plane β -Ga 2 O 3 Flake Based Field Effect Transistor and Its Hydrogen Response
ECS Journal of Solid State Science and Technology
김지현7
2021Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode 나노 화학공정기술 › 나노소재 가공기술
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
김지현4
2020Highly selective ozone-treated β -Ga2O3 solar-blind deep-UV photodetectors
Applied Physics Letters
김지현62
2020Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode
ECS Journal of Solid State Science and Technology
김지현58
2020Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconductor in phosphoric acid and its optoelectronic device application
Applied Surface Science
김지현34
2020Dual-field plated β-Ga 2 O 3 nano-FETs with an off-state breakdown voltage exceeding 400 V
Journal of Materials Chemistry C
김지현21
2020Ultra-Wide Bandgap β -Ga 2 O 3 Heterojunction Field-Effect Transistor Using p-Type 4H-SiC Gate for Efficient Thermal Management
ECS Journal of Solid State Science and Technology
김지현19
2020BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes
ECS Journal of Solid State Science and Technology
김지현7
2019Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga2O3 Phototransistors
ACS Photonics
김지현131
2019Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolayer field-effect transistors
RSC Advances
김지현39
2019Defect States Determining Dynamic Trapping-Detrapping in β-Ga 2 O 3 Field-Effect Transistors
ECS Journal of Solid State Science and Technology
김지현36
2019Controlling the threshold voltage of β-Ga 2 O 3 field-effect transistors via remote fluorine plasma treatment
Journal of Materials Chemistry C
김지현32
201960Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers
ECS Journal of Solid State Science and Technology
김지현29
2019Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts
ECS Journal of Solid State Science and Technology
김지현8
2019Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifiers
ECS Journal of Solid State Science and Technology
김지현8
2018Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
Applied Physics Letters
김지현156
2018High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate
Applied Physics Letters
김지현116
2018Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics
ACS Applied Materials & Interfaces
김지현116
2018Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
Applied Physics Letters
김지현104
2018Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current
Journal of Applied Physics
김지현66
201810 MeV proton damage in β-Ga2O3 Schottky rectifiers
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
김지현59
2018Tuning the Threshold Voltage of Exfoliated β-Ga2O3Flake-Based Field-Effect Transistors by Photo-Enhanced H3PO4Wet Etching
ECS Journal of Solid State Science and Technology
김지현33

인접 그래프

노드 hover = 이웃 강조 · 1회 클릭 = 고정 · 고정된 노드 다시 클릭 = 페이지 이동

이 문서와 연결된 페이지

교수 1

김지현

논문 58

Development of solar-blind photodetectors based on Si-implanted β-Ga_2 · Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconducto · 1 GeV proton damage in β-Ga2O3 · Defects responsible for charge carrier removal and correlation with de · WSe2/β-Ga2O3 p–n Heterojunction-Based Normally Off Phototransistors fo · (100) Plane β -Ga 2 O 3 Flake Based Field Effect Transistor and Its Hy · 10 MeV proton damage in β-Ga2O3 Schottky rectifiers · Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode · Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 ph · Exfoliated and bulk β-gallium oxide electronic and photonic devices · Forward Metal-Assisted Chemical Etching for Self-Aligned Gate-Recess E · Point defect induced degradation of electrical properties of Ga2O3 by · Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flake · Contacting Mechanically Exfoliated β-Ga2O3Nanobelts for (Opto)electron · Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with · A high-breakdown-voltage β-Ga 2 O 3 nanoFET with a beveled field-plate · High Responsivity β-Ga 2 O 3 Metal–Semiconductor–Metal Solar-Blind Pho · Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-G · Solar-Blind Metal-Semiconductor-Metal Photodetectors Based on an Exfol · Highly selective ozone-treated β -Ga2O3 solar-blind deep-UV photodetec · Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Bl · Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolaye · Influence of High-Energy Proton Irradiation on β-Ga 2 O 3 Nanobelt Fie · Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diod · Defining the relative proton irradiation hardness of β-Ga2O3 · 60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers · Achieving Face-Selective Ohmic Contact to β-Ga 2 O 3 via Anisotropic T · Effect of front and back gates on β-Ga2O3 nano-belt field-effect trans · Dual-field plated β-Ga 2 O 3 nano-FETs with an off-state breakdown vol · Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nano · Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 p · Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Di · Defect States Determining Dynamic Trapping-Detrapping in β-Ga 2 O 3 Fi · β-Ga 2 O 3 heterojunction field-effect transistors prepared via UV las · High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect tran · High Gain β-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier · Tuning the Threshold Voltage of Exfoliated β-Ga2O3Flake-Based Field-Ef · Effects of Downstream Plasma Exposure on β -Ga 2 O 3 Rectifiers · Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 usi · 15 MeV proton damage in NiO/β-Ga2O3vertical rectifiers · Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal–Insulator– · Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) · 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers · Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifie · Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga2O3 Phototransisto · Enhancement of heat dissipation in β-Ga 2 O 3 Schottky diodes through · Magneto-optical properties of Cr3+ in β-Ga2O3 · Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heteroju · Diffusion length of non-equilibrium minority charge carriers in β-Ga2O · Controlling the threshold voltage of β-Ga 2 O 3 field-effect transisto · High reverse breakdown voltage Schottky rectifiers without edge termin · Ultra-Wide Bandgap β -Ga 2 O 3 Heterojunction Field-Effect Transistor · Optimized HZO/Al2O3 gate stack enables thermally stable β-Ga2O3 ferroe · Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconduct · Plasma Nitridation Effect on β-Ga2O3 Semiconductors · BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes · Self-Powered Ultraviolet-C Imaging Using Epitaxial Gallium Oxide Membr · 2D Amorphous GaOX Gate Dielectric for β-Ga2O3 Field-Effect Transistors