Self-Powered Ultraviolet-C Imaging Using Epitaxial Gallium Oxide Membranes with Anisotropic Domain Conduction
2025 · ACS Nano
저자
Byung‐Soo Kim, Jae Young Kim, Jae Young Kim, Duyoung Yang, Sung Hyuk Park, Jung‐El Ryu, Yoon Jung Lee, Hyuk Jin Kim, Joonyup Bae, 김지현 (Jihyun Kim), Jihyun Kim, Yongjo Park, Ho Won Jang
연구주제
Ga2O3 and related materials · 2D Materials and Applications · GaN-based semiconductor devices and materials
NTIS 과학기술표준분류
가장 가까운 분류(전기/전자 > 반도체 소자·회로 > 반도체 재료)가 화학·화공 범위 밖이다. 배정 근거: AI 키워드가 잡은 NTIS 과제의 분류.
AI 연구 키워드·방법
anisotropic conduction 베타 산화갈륨(β-Ga2O3) beta gallium oxide thin film epilayer transfer epitaxial membrane transfer ultraviolet imaging ultraviolet photodetector vertical photodetector
키워드 (OpenAlex)
β-Ga2O3 vertical photodetectors anisotropic conductivity rotational domains detectivity
초록
High Resolution Image Download MS PowerPoint Slide High efficiency of charge carrier conduction is crucial for photoelectrical performance in ultraviolet C (UVC) photodetectors (PDs) based on heteroepitaxial beta-gallium oxide (β-Ga 2 O 3 ) thin films. However, the presence of in-plane rotational domains due to anisotropic symmetry severely degraded the efficiency of charge carrier conduction by trapping and recombination of carriers in conventional lateral PD (LPD). Here, we demonstrate an approach that enables vertical conduction configuration while preserving the high crystallinity of epitaxial Si-doped β-Ga 2 O 3 (Si:Ga 2 O 3 ) through the epilayer transfer using a hole pattern sapphire nanomembrane (HPSN) growth template. Based on the characterization of domain orientation and photoresponsivity in transferred epitaxial Si:Ga 2 O 3 membranes, we reveal the defect-related anisotropic …
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