Heterostructure WSe2−Ga2O3 Junction Field-Effect Transistor for Low-Dimensional High-Power Electronics

Layered materials separated from each bulk crystal can be assembled to form a strain-free heterostructure by using the van der Waals interaction. We demonstrated a heterostructure n-channel depletion-mode β-Ga 2 O 3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe 2 flake. Typical diode characteristics with a high rectifying ratio of ∼10 5 were observed in a p-WSe 2 /n-Ga 2 O 3 heterostructure diode, where WSe 2 and β-Ga 2 O 3 were obtained by mechanically exfoliating each crystal. Layered JFETs exhibited an excellent I DS – V DS output as well as I DS – V GS transfer characteristics with a high on/off ratio (∼10 8 ) and low subthreshold swing (133 mV/dec). Saturated output currents were observed with a threshold voltage of −5.1 V and a three-terminal breakdown voltage of +144 V. Electrical performances of the fabricated heterostructure JFET …