Influence of High-Energy Proton Irradiation on β-Ga 2 O 3 Nanobelt Field-Effect Transistors

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-Ga 2 O 3 nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-Ga 2 O 3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 10 15 cm –2 . Greater radiation-induced degradation occurs in the conductive channel of the β-Ga 2 O 3 nanobelt than at the contact between the metal and β-Ga 2 O 3 . The on/of…