Ga2O3 and related materials

연구주제 · Electronic, Optical and Magnetic Materials

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High Gain β-Ga2O3 Solar-Blind Schottky Barrier Photodiodes via Carrier · Electrical properties and deep trap spectra in Ga2O3 films grown by ha · (100) Plane β -Ga 2 O 3 Flake Based Field Effect Transistor and Its Hy · Tuning the Threshold Voltage of Exfoliated β-Ga2O3Flake-Based Field-Ef · Perspective—Opportunities and Future Directions for Ga2O3 · 10 MeV proton damage in β-Ga2O3 Schottky rectifiers · Photoelectrochemical etching of ultra-wide bandgap β-Ga2O3 semiconduct · Effects of Downstream Plasma Exposure on β -Ga 2 O 3 Rectifiers · Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Bl · 15 MeV proton damage in NiO/β-Ga2O3vertical rectifiers · Large-scale synthesis of atomically thin ultrawide bandgap β-Ga2O3 usi · Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices I · Field-plate engineering for high breakdown voltage β-Ga 2 O 3 nanolaye · Photo-enhanced metal-assisted chemical etching of α-gallium oxide grow · Capacitive β-Ga2O3 solar-blind photodetector with graphene electrode · Electrical Characteristics of Vertical Ni/β-Ga2O3Schottky Barrier Diod · Influence of High-Energy Proton Irradiation on β-Ga 2 O 3 Nanobelt Fie · Quasi-Two-Dimensional h-BN/β-Ga 2 O 3 Heterostructure Metal–Insulator– · Defining the relative proton irradiation hardness of β-Ga2O3 · Achieving Face-Selective Ohmic Contact to β-Ga 2 O 3 via Anisotropic T · 1.5 MeV electron irradiation damage in β-Ga2O3 vertical rectifiers · 60Co Gamma Ray Damage in Homoepitaxial β-Ga2O3Schottky Rectifiers · Optical Signature of the Electron Injection in Ga2O3 · Effect of 5 MeV proton irradiation damage on performance of β-Ga2O3 ph · High responsivity solar-blind metal-semiconductor-metal photodetector · Exfoliated and bulk β-gallium oxide electronic and photonic devices · Plasma Nitridation Effect on β-Ga2O3 Semiconductors · Annealing of Proton and Alpha Particle Damage in Au-W/β-Ga2O3 Rectifie · Will surface effects dominate in quasi-two-dimensional gallium oxide f · Electrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconducto · Forward Metal-Assisted Chemical Etching for Self-Aligned Gate-Recess E · Effect of front and back gates on β-Ga2O3 nano-belt field-effect trans · 1 GeV proton damage in β-Ga2O3 · Point defect induced degradation of electrical properties of Ga2O3 by · BCl3-Based Dry Etching of Exfoliated (100) ß-Ga2O3 Flakes · Radiation damage effects in Ga 2 O 3 materials and devices · Deep level defect states in β-, α-, and ɛ -Ga2O3 crystals and films: I · Ultrahigh Deep-UV Sensitivity in Graphene-Gated β-Ga2O3 Phototransisto · Preface—JSS Focus Issue on Gallium Oxide Based Materials and Devices · Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flake · Enhancement of heat dissipation in β-Ga 2 O 3 Schottky diodes through · Magneto-optical properties of Cr3+ in β-Ga2O3 · A review of Ga2O3 materials, processing, and devices · Dual-field plated β-Ga 2 O 3 nano-FETs with an off-state breakdown vol · Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heteroju · Contacting Mechanically Exfoliated β-Ga2O3Nanobelts for (Opto)electron · Deep-ultraviolet photodetector based on exfoliated n-type β-Ga2O3 nano · Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS · Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with · A high-breakdown-voltage β-Ga 2 O 3 nanoFET with a beveled field-plate · Self-Powered Ultraviolet-C Imaging Using Epitaxial Gallium Oxide Membr · Diffusion length of non-equilibrium minority charge carriers in β-Ga2O · High Responsivity β-Ga 2 O 3 Metal–Semiconductor–Metal Solar-Blind Pho · Defects responsible for charge carrier removal and correlation with de · WSe2/β-Ga2O3 p–n Heterojunction-Based Normally Off Phototransistors fo · Controlling the threshold voltage of β-Ga 2 O 3 field-effect transisto · Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-G · High reverse breakdown voltage Schottky rectifiers without edge termin · Self-powered solar-blind α-Ga2O3 thin-film UV-C photodiode grown by ha · Elevated temperature performance of Si-implanted solar-blind β-Ga2O3 p 외 12개

학문분야 1

Electronic, Optical and Magnetic Materials