Giant Colloidal Quantum Dot/α-Ga2O3 Heterojunction for High Performance UV–Vis–IR Broadband Photodetector

Broadband optoelectronics, which extend from the UV to IR regions, are crucial for imaging, autonomous driving, and object recognition. In particular, photon detection efficiency relies significantly on semiconductor properties, such as absorption coefficients and electron–hole pair generation rate, which can be optimized by designing a suitable p–n junction. In this study, we devise giant PbS colloidal quantum dots (G-PbS CQDs) that exhibit high absorption coefficients and broadband absorption. To leverage these exceptional optical properties, we combine G-PbS CQDs with an ultrawide-bandgap semiconductor, α-Ga 2 O 3, and create an efficient G-PbS CQD/α-Ga 2 O 3 heterojunction photodetector that exhibits high performance across the UVC–vis–NIR spectrum range. The resultant heterojunction facilitates efficient electron–hole pair separation at the G-PbS CQD/α-Ga 2 O 3 heterojunction. Furth…