A review of Ga2O3 materials, processing, and devices
2018 · Applied Physics Reviews
저자
S. J. Pearton, Jiancheng Yang, Patrick H. Cary, Fan Ren, 김지현 (Jihyun Kim), Marko Jak Tadjer, Michael A. Mastro
연구주제
Ga2O3 and related materials · Semiconductor materials and devices
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AI 연구 키워드·방법
산화갈륨(Ga2O3) gallium oxide polymorph 전력전자 와이드밴드갭 반도체
키워드 (OpenAlex)
gallium oxide β-Ga2O3 polymorphs power electronics high-voltage rectifiers metal oxide field effect transistors p-type doping defects and impurities
초록
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ε) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transist…
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