SNU CBE

A review of Ga2O3 materials, processing, and devices

2018 · Applied Physics Reviews

저자

S. J. Pearton, Jiancheng Yang, Patrick H. Cary, Fan Ren, 김지현 (Jihyun Kim), Marko Jak Tadjer, Michael A. Mastro

연구주제

Ga2O3 and related materials · Semiconductor materials and devices

NTIS 과학기술표준분류

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AI 연구 키워드·방법

산화갈륨(Ga2O3) gallium oxide polymorph 전력전자 와이드밴드갭 반도체

키워드 (OpenAlex)

gallium oxide β-Ga2O3 polymorphs power electronics high-voltage rectifiers metal oxide field effect transistors p-type doping defects and impurities

초록

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond existing technologies due to its large bandgap. It is usually reported that there are five different polymorphs of Ga2O3, namely, the monoclinic (β-Ga2O3), rhombohedral (α), defective spinel (γ), cubic (δ), or orthorhombic (ε) structures. Of these, the β-polymorph is the stable form under normal conditions and has been the most widely studied and utilized. Since melt growth techniques can be used to grow bulk crystals of β-GaO3, the cost of producing larger area, uniform substrates is potentially lower compared to the vapor growth techniques used to manufacture bulk crystals of GaN and SiC. The performance of technologically important high voltage rectifiers and enhancement-mode Metal-Oxide Field Effect Transist…

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교수 1

김지현

연구주제 1

Ga2O3 and related materials

키워드 3

산화갈륨(Ga2O3) · 와이드밴드갭 반도체 · 전력전자