Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
2018 · Journal of Applied Physics
저자
S. J. Pearton, Fan Ren, Marko Jak Tadjer, 김지현 (Jihyun Kim)
연구주제
Ga2O3 and related materials · GaN-based semiconductor devices and materials
NTIS 과학기술표준분류
가장 가까운 분류(전기/전자 > 반도체 소자·회로 > 화합물소자)가 화학·화공 범위 밖이다. 배정 근거: AI 키워드가 잡은 NTIS 과제의 분류.
AI 연구 키워드·방법
산화갈륨(Ga2O3) metal oxide semiconductor field effect transistor power rectifier 와이드밴드갭 반도체
키워드 (OpenAlex)
gallium oxide β-Ga2O3 wide bandgap semiconductors power rectifiers MOSFET Schottky diodes reverse breakdown voltage edge termination
초록
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga…
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