Achieving Ambipolar Transport Characteristics in the n-WS2 Channel via Remote p-Doping and its Enhancement-Mode Ambipolar Field-Effect Transistor Operation

To overcome the inherent short-channel effects in Si microelectronics and enhance the performances of ultrahigh-density integrated circuits, researchers are focused on developing next-generation channel materials compatible with Si industry standards. Ambipolar two-dimensional (2D) transition metal dichalcogenides (TMDs), such as WS 2, exhibit great promise due to their layer-dependent bandgaps and highly comparable carrier mobilities for both holes and electrons. However, the prevalence of defects in WS 2, particularly chalcogen vacancies, often results in n-dominant behavior, restricting ambipolar transport. For the integration of n-WS 2 into Si-based complementary metal-oxide semiconductor (CMOS) platforms, reliable hole-doping techniques are essential to achieve comparable hole and electron transports. Herein, we introduce a remote charge-transfer doping approach to enable the stable…