Phosphorus-ion implantation in two-dimensional WSe2 for hole doping

As silicon-based devices near their scaling limits, transition-metal dichalcogenides (TMDCs) such as tungsten diselenide (WSe2) have emerged as promising alternatives. However, the lack of a wafer-scale, industry-compatible doping technique has hindered their integration into standard semiconductor processes. In this study, we demonstrate a complementary metal-oxide-semiconductor (CMOS)-compatible p-type doping strategy for WSe2 involving phosphorus-ion implantation followed by rapid thermal annealing. Through Stopping and Range of Ions in Materials simulations of WSe2 encapsulated with SiO2 (150 nm), the implantation energy (150 keV) of a phosphorus ion with a dose of 5 × 1013 ions/cm2 was selected to localize the dopants near the surface of WSe2. The postannealing optimized at 900 °C for 3 min in Ar ambient after phosphorus-ion implantation resulted in a 124 mV surface-potential reduct…