Capacitance–voltage characteristics of Pt/hBN/WSe2 metal–insulator–semiconductor capacitor doped by charge-transfer process

Metal–insulator–semiconductor (MIS) capacitors composed of low-dimensional van der Waals (vdW) materials are of fundamental interest for understanding carrier transport properties at the atomic scale. Herein, we fabricated a Pt/hBN/WSe2 MIS low-dimensional capacitor, followed by UV/ozone-induced oxidation to form a WOX layer, which is an electron-withdrawing agent. Capacitance–voltage (C–V) characteristics before and after p-doping of the WSe2 layer were compared for different durations of UV/ozone treatments. The C–V behaviors in the pristine condition exhibited ambipolar transport characteristics at both high and low frequencies because of co-existence of electron and hole carriers, which are advantageous for next-generation complementary MIS architectures. When WSe2 was p-doped, a typical p-type C–V curve with a high-frequency inversion region was observed, because the minority carrie…