Selective p-Doping of 2D WSe2 via UV/Ozone Treatments and Its Application in Field-Effect Transistors

Development of two-dimensional (2D) semiconductor devices with good Ohmic contact is essential to utilize their full potential for nanoelectronics applications. Among the methods that have been introduced to reduce the Schottky barrier in 2D material-based electronic devices, charge transfer doping has attracted significant interest because of its efficiency, simplicity, and compatibility with the microelectronic fabrication process. In this study, 2D WSe 2 -based field-effect transistors (FETs) were subjected to selective UV/ozone treatment to improve the Ohmic contact by forming WO X with a high work function, which induced hole doping in the neighboring WSe 2 via electron transfer. The atomic force microscopy, cross-sectional transmission electron microscopy, and micro-Raman spectroscopy analyses confirmed the self-limiting formation of WO X while maintaining the crystallinity of the …