Solution-Grown Homojunction Oxide Thin-Film Transistors

Growing attention has been given to low temperature, solution-processed metal oxide thin-film transistors because they can be applied in the emerging sector of flexible and large-scale electronics. However, major obstacles of solution-grown devices, such as their relatively low field-effect mobility and the difficulty of controlling carrier concentration, limit the further advancement of the electronics. Here, we overcome these constraints through a newly renovated structure, called a “homojunction”, consisting of double-stacked semiconductors with same material. The homojunction oxide thin-film transistor has remarkable electrical performance with controllability, for example, tunable turn-on voltage (−80 V to −8 V) and high average field-effect mobility (∼50 cm 2 /V·s) are obtained via a low annealing temperature process (250 °C). Furthermore, notable achievements associated with stabi…