Effects of proton irradiation and thermal annealing on off-state step-stressed AlGaN/GaN high electron mobility transistors

The effects of proton irradiation doses on dc characteristics of reference, electrically stressed under off-state conditions and stressed/annealed AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. The HEMTs were irradiated with protons at a fixed energy of 5 MeV and doses ranging from 1013 to 1015 cm−2. As expected, in all three types of HEMTs, more degradation of the device dc characteristics was observed for higher doses due to the larger displacement damage in two-dimensional electron gas channel of the HEMTs. The electrically stressed HEMTs after proton irradiation showed more degradation compared with reference and stressed/annealed HEMTs. After proton irradiation at a dose of 1015 cm−2, the drain saturation current and maximum transconductance of stressed HEMTs were decreased by 28.5% and 15%, respectively, compared to 24% and 11.5%–12%, respectively, for refe…