Overcoming Boltzmann’s Tyranny in All-Metal-Oxide Negative Capacitance Field-Effect Transistor

Negative capacitance field-effect transistors (NCFETs) have emerged as potent contenders for next-generation electronics, capable of surmounting Boltzmann’s tyranny that limits the minimum subthreshold swing (SS) to 60 mV dec –1 at room temperature. Despite these advances, most precedents beyond silicon channels employ unconventional channels such as 2D van der Waals materials or 1D carbon nanotubes, whose tenuous CMOS compatibility hampers uniformity in large-scale fabrication and exacerbates concerns about reproducibility. Functional oxides, such as oxide semiconductors and high-k oxides, offer a breakthrough to these obstacles, especially with CMOS-compatible methods like atomic layer deposition (ALD). Here, we demonstrate NCFETs with all components fabricated by ALD, featuring Ga-doped HfO 2 (HGO) as the ferroelectric layer, undoped HfO 2 as a paraelectric buffer, and indium gallium …