Interlayered Ion‐Gated Transistors for Reservoir Computing With Pre‐Processing Synaptic Current

ABSTRACT Due to the advantages of low‐voltage operation and memory characteristics, electrolyte‐gated transistors (EGTs) have been proposed as building blocks for neuromorphic systems. Recently, reservoir computing (RC) is attracting interests because RC utilize nonlinear system to enrich the input source into a higher dimension, whereas traditional neural network prefers linear system. RC also has the advantages of low energy consumption and fast response speed because it only trains at the readout layer. EGT is a promising candidate for RC due to tunable output current depending on input pulse voltage using its nonlinear system. Herein, we proposed poly (vinylidene fluoride‐hexafluoropropylene) (PVDF‐HFP) interlayered EGT for RC. Semicrystalline and porous morphology of PVDF‐HFP interlayer induced ion‐trapping at the interface between amorphous and crystalline regions resulted in long …