Single-additive TSV filling achieved with a tris-ammonium-based suppressor

• A single-suppressor electrodeposition process enables defect-free TSV filling. • Single-suppressor gap-filling overcomes the limitations of typical three-additive methods. • A triazine-core molecule with three ammonium side chains is designed for TSV filling. • Selective breakdown of the suppressor at the TSV bottom promotes extreme Cu filling. • A bottom-up filling mechanism is suggested by the behavior of the synthesized suppressor. As transistor scaling approaches its physical limits, advanced semiconductor packaging has emerged as a promising solution by enabling system-level integration and supporting the More-than-Moore paradigm. One of the most critical aspects of semiconductor packaging is the formation of high-quality metal interconnections that can reliably connect multiple dies. Cu electrodeposition has become increasingly important due to its ability to fabricate complex in…