Bifacially Engineered Perovskite‐Based Synaptic Memristors Achieve High Linearity and Symmetricity for Accurate and Robust Neuromorphic Computing

Abstract Achieving both high linearity and symmetricity in metal halide perovskite (MHP)‐based memristors remains challenging, primarily due to their abrupt switching behaviors and irregular conductive filament (CF) pathways. Here, bifacially engineered MHP memristors exhibiting simultaneous high linearity, symmetricity, and reliability are reported. Top‐surface passivation using phenylethylammonium iodide (PEAI) facilitates the formation of an ultrathin 2D perovskite layer (PEA 2 PbI 4 ), promoting gradual switching and effectively suppressing ion migration during CF formation, thereby significantly enhancing the linearity of long‐term potentiation. Meanwhile, bottom‐side PEAI treatment alleviates tensile strain and enhances perovskite grain uniformity, leading to stable CF rupture and improved linearity in long‐term depression as well as symmetricity. The resulting bifacially engineere…