All-Inorganic Metal Oxide-Based p-n Heterojunction Ternary-State Transistors

Ternary logic has been proposed as a type of many-valued logic system to overcome the limitations of integration density and energy efficiency in the current complementary metal-oxide-semiconductor (CMOS) technology. In detail, p-n heterojunction transistors with ternary-state switching characteristics can implement ternary logic structures. However, most research on p-n heterojunction ternary-state transistors (TSTs) has focused on organic or 2D materials, which face significant challenges in meeting the demands of current CMOS technology. Nonetheless, due to the lack of suitable p-type oxide semiconductors, research on all-inorganic oxide-based TSTs has been limited. Herein, n-type TSTs are demonstrated through the formation of a p-n heterojunction inorganic oxide channel, comprising n-type indium gallium zinc oxide (IGZO) and p-type tellurium selenium oxide (TeSeO), which aligns with …