Mixed-Dimensional Contact Architecture to WSe2 for Efficient Hole Injection

Si-based electronic devices face inherent performance limitations at the nanoscale, primarily due to short-channel effects and interface defects. As a result, transition-metal dichalcogenides (TMDs) have emerged as promising alternatives, offering unique advantages such as dangling-bond-free surfaces and tunable bandgaps. Among TMDs, tungsten diselenide (WSe 2 ) has garnered significant attention as a p-type semiconductor owing to its high hole mobility and favorable surface chemistry. However, its practical implementation is often hindered by Fermi-level pinning at metal contacts, leading to high contact resistance and limited carrier injection efficiency. In this study, we present a mixed-dimensional contact architecture that integrates one-dimensional (1D) edge contacts and two-dimensional (2D) surface contacts to enhance hole injection in WSe 2 field-effect transistors (FETs). By con…