10 MeV Proton and Neutron Damage in Lateral AlN Rectifiers

2025 · ECS Journal of Solid State Science and Technology

저자

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Madani Labed, Ho Jung Jeon, You Seung Rim, Gabriel Marciaga, Seth Lovo, Leonid Chernyak, Alfons Schulte, 김지현 (Jihyun Kim), Nahid Sultan Al‐Mamun, Aman Haque, Fan Ren, S. J. Pearton

연구주제

Radiation Effects in Electronics · GaN-based semiconductor devices and materials

NTIS 과학기술표준분류

가장 가까운 분류(전기/전자 > 반도체 소자·회로 > 화합물소자)가 화학·화공 범위 밖이다. 배정 근거: AI 키워드가 잡은 NTIS 과제의 분류.

AI 연구 키워드·방법

질화알루미늄(AlN) lateral rectifier 중성자 조사 양성자 조사

키워드 (OpenAlex)

proton irradiation neutron irradiation radiation damage on-resistance deep levels interface states Schottky barrier height charge trapping

초록

Lateral Schottky or heterojunction rectifiers were irradiated with 10 MeV protons and neutrons. For proton irradiation, the forward current of both types of rectifiers decreased by approximately an order of magnitude, with a corresponding increase in on-state resistance. The resultant on/off ratio improved after irradiation because of the larger decrease in reverse current compared to forward current. Both types of rectifiers displayed a shift in forward current and RON curves to lower voltages after irradiation. This could be due to defects created by neutron irradiation introducing deep energy levels within the bandgap of AlN. These deep levels can trap charge carriers, reducing their mobility and increasing the on-state resistance. Transmission electron microscopy showed disorder created at the AlN/NiO interface by neutron irradiation. TCAD simulation was used to study the effects of …

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