Enhancing Stability of n-Type Doped Organic Semiconductors through Low Boiling Point Solvent-Assisted Room Temperature Drying

The development of n-type organic semiconductors (OSCs) has been lagged behind that of p-type OSCs, mainly due to the limited availability of the electron deficient π-conjugated backbones and facile electron trapping by ambient oxidants. Improving the performance of n-type OSCs through n-doping is essential for realizing p-n junction diodes and complementary circuits. Conventional vacuum deposition doping is costly and time-consuming, while solution doping risks thermal damage through necessary annealing. Therefore, the development of a simpler, more affordable n-doping method is crucial. In this study, we have developed a solution-processed n-doping method using an organic cationic dye in a low boiling point solvent that can be dried at room temperature in 1 h, which eliminates the need for annealing. The effects of different organic cationic dyes and reducing agents on the n-type OSC w…