Atomic Level Defect Structure Engineering for Unusually High Average Thermoelectric Figure of Merit in n‐Type PbSe Rivalling PbTe

Abstract Realizing high average thermoelectric figure of merit (ZTave) and power factor (PFave) has been the utmost task in thermoelectrics. Here the new strategy to independently improve constituent factors in ZT is reported, giving exceptionally high ZTave and PFave in n‐type PbSe. The nonstoichiometric, alloyed composition and resulting defect structures in new Pb1+xSe0.8Te0.2 (x = 0–0.125) system is key to this achievement. First, incorporating excess Pb unusually increases carrier mobility (µH) and concentration (nH) simultaneously in contrast to the general physics rule, thereby raising electrical conductivity (σ). Second, modifying charge scattering mechanism by the authors’ synthesis process boosts a magnitude of Seebeck coefficient (S) above theoretical expectations. Detouring the innate inverse proportionality between nH and µH; and σ and S enables independent control over them…